Abstract
Silicon charged particle detectors, capable of being baked, have been made by ion implantation and silicon oxide passivation. The junction is made by implanting boron into silicon having different base resistivities and then evaporating a thin layer of nickel over the implanted boron. The junction and the wafer edge is passivated with silicon oxide to protect it from ambient effects and to keep the surface stable. The detectors have been heated several times to 200°C for 10–13 h, in vacuum and their resolution and noise measured. Typical values for 200 mm 2 detectors being 18.7 keV and11.4 keV respectively, at room temperature, for 241Am.
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