Ion implantation of semiconductors

Abstract

Abstract Ion implantation was first applied to semiconductors over 30 years ago as a means of introducing controllable concentrations of n- and p-type dopants at precise depths below the surface. It is now an indispensable process in the manufacture of integrated circuits. This review gives a brief and selected overview of ion beam modification of semiconductors, treating both fundamental and technological issues of current interest. Damage introduction during ion irradiation and its removal during a thermal annealing step are key issues which are highlighted. Some semiconductors are easily damaged and amorphised (e.g. silicon) whereas others (e.g. gallium nitride) are quite resistant to damage production due to efficient dynamic defect annihilation during implantation. The conditions needed to remove implantation damage also vary dramatically from one semiconductor to another: amorphous layers in silicon can be recrystallised to completely remove disorder at ∼600°C, whereas extended defects in gallium nitride require temperatures of >1400°C to remove them. High dose implantation can result in the formation of supersaturated solid solutions, alloys and compounds, often with intriguing properties as a result of the non-equilibrium aspects of ion implantation. Formation of silicon dioxide layers directly during oxygen bombardment of silicon, even under cryogenic implantation conditions, is given as an example. From the standpoint of semiconductor technology, there are several current issues under intense study. Two of these are highlighted with respect to silicon technology: the problems of transient enhanced diffusion of dopants during low temperature annealing due to residual implantation-induced defects, and the need to remove extremely low concentrations of metals from active device regions. Finally, some recent novel applications of implantation in compound semiconductors are treated.