Abstract
The technology of doping semiconductors is of central importance to the modern electronics industry: it influences both the technical performance of devices and the economics of their production. Until comparatively recently dopant impurities have been introduced by thermal techniques, either homogeneously during the growth of a crystal from the melt, or over a limited thickness during epitaxial growth or by diffusion.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
