Abstract
Radiation defect formation in the course of the ion implantation of the FP-9120 positive photo-resist films is investigated. It is established that the radiation defect formation proceeds not only in the ion-deceleration region but also far from the region of the projected path of the Sb ions. Polymer was radiation-hardened over the entire film thickness, and this effect is pronounced stronger behind the incorporated layer of the ions. It is presumably caused by radiation linking. Ion implantation leads to lowering the microhardness near the photoresist/Si interface, which is caused by worsening of the adhesion interaction of a photopolymer film with silicon.
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