Abstract
Patterned exfoliation, driven by 0.45 MeV H and 1.0–1.4 MeV He implantations, has been demonstrated in single crystal GaAs and InP. In both materials implantation of 4 × 10 16 cm −2 He or 1 × 10 17 cm −2 H ions through a suitable implant mask, followed by a 350°C thermal anneal, resulted in expulsion of material exclusively from the implanted regions i.e. the exfoliation field mapped the details of the mask and in all cases to a depth determined by the depth of the implanted ion. The effect of varying the anneal temperature ramp-up rate is marked. At the highest rate so far examined (100°C/s) the expelled material from each exposed area can be in the form of a single block. Exfoliation is also demonstrated in InP containing a buried InGaAsP alloy layer.
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