Abstract
The influence of ion implantation on the interdiffusion of Cd and Mg in CdTe/CdMgTe single quantum wells was studied. The samples were implanted with 150 keV Ar+ ions and subsequently annealed for 1 min by rapid thermal annealing at temperatures between 400 and 480 °C. Ion implantation and annealing lead to an intermixing of barrier and well material, causing a blue shift of the characteristic emission spectrum. The dependence of the energy shift on the ion dose and the annealing temperature was studied. For an ion dose of 1×1014 cm−2 and an annealing temperature of 400 °C a blueshift of 80 meV compared to a nonimplanted reference sample indicates a significant enhancement of the interdiffusion of Cd and Mg by the implantation.
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