Abstract
In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to control the operating wavelength of ring resonators, which is very sensitive to fabrication imperfections. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore, form the basis of multiple optical devices. In this paper, we discuss design, modeling, and fabrication of ring resonators and their subsequent trimming using ion implantation of germanium into silicon, followed by either rapid thermal annealing or localized laser annealing. The results confirm the ability to permanently tune the position of the resonant wavelength to any point inside the free spectral range of the ring resonator, thus, greatly reducing the amount of power required for active tuning of these devices.
Highlights
Silicon photonics, pioneered as a material platform for thirty years, is at present one of the most buoyant technologies in the world, and is regarded as a low cost solution for short reach interconnects for applications in the information and communication sectors, environmental engineering, and healthcare [1]-[10]
Electron beam induced compaction and strain to the oxide cladding have been proposed as methods to trim the resonant wavelength peak of silicon ring resonators [8]
A difference within 2 nm in the target wavelength peak position before (~1559 nm simulated, ~1561 nm measured) and after (~1565 nm simulated, ~1566 nm measured, θ=6o) Ge-ion implantation can be associated to fabrication process and SOI wafer thickness variations
Summary
Silicon photonics, pioneered as a material platform for thirty years, is at present one of the most buoyant technologies in the world, and is regarded as a low cost solution for short reach interconnects for applications in the information and communication sectors, environmental engineering, and healthcare [1]-[10]. The ring resonator represents one of the basic building blocks of many photonic circuits It is widely used for both active and passive devices, and has been used in particular for the development of a number of applications such as lasing, filtering, modulation and sensing, aiming to provide devices that offer compactness and low power consumption. Electron beam induced compaction and strain to the oxide cladding have been proposed as methods to trim the resonant wavelength peak of silicon ring resonators [8]. In this case the refractive index variation of the oxide is quite small, which limits the tuning range (resonant wavelength red shift of up to 4.9 nm was observed). Electron beam bleaching of a polymer cladding was proposed for more effective trimming [9] but it lacks universal CMOS compatibility, and is a slow process
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