Abstract
In this review, ion-implantation doping and ion-implantation damage in IV–VI semiconductors are discussed. Doping can be achieved by implanting impurity atoms as well as the constituent elements themselves since the electrical properties of these compounds are determined not only by impurities but also by deviations from stoichiometry. Results obtained with implantation doping are presented and the applications of ion implantation to the fabrication of infrared photodetectors and laser diodes are summarized. The main feature of the implantation damage is a saturation of the carrier concentration as a function of the dose, independent of the ion species and implantation conditions. This unusual behaviour has been explained recently by a defect-level model, which is discussed in detail. The similarity of the damage caused by ion implantation and by electron irradiation is pointed out.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
