Abstract
Defect spatial distributions are investigated after implantation of ions in CdxHg1−xTe under various sets of conditions (radiation dose, type and energy of ions, ion current density, and dose absorption rate). Distribution profiles of electrically active radiation-induced defects are calculated with allowance for the generation of defect complexes of vacancion nature. Defect profiles are determined in experiments after implantation of hydrogen and iron ions at constant low ion current densities, and after implantation of copper, tungsten, and aluminum ions in the case of pulsed bombardment at high ion current densities. Secondary-ion mass spectrometry, electron-positron annihilation, Rutherford backscattering of ions, and differential Hall measurements are used to obtain distribution profiles of interstitial ions, vacancion and extended defects, and electrically active defects, respectively. The profiles of these defects are analyzed for various ion-implantation conditions.
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