Abstract

Abstract Complex alkali-borosilicate glasses are being studied, and used, as media for radioactive waste encapsulation. The effects of radiation from α-decay processes on the physical properties of such glasses is of interest. The energy deposited in the glass by such decay processes can be simulated by ion implantation. We have examined the effects of ion implantation (He, Ar, Xe) on (1 - x)M2O.xB2/3.3SiO2, (M = Na, K; x = 0, 0.2, 0.4, 0.6, 0.8) glass, through measurements of induced stress (due to changes in volume Δ V/V) in the implanted glasses fabricated in the form of thin cantilever beams. These measurements show, as general features, (1) an initial expansion, over a fluence range governed by the alkali content, followed by compaction; (2) the maximum stress in the compaction regime is greatest for lowest alkali levels; and (3) the stress data scale with energy into electronic processes for the various ions and for all the glasses. These data suggest that the interstital alkali plays an important r...

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