Ion implantation dose dependence of photocarrier radiometry for thermally annealed silicon wafers

Abstract

Photocarrier radiometry (PCR) signal is a monotonic function of the implantation dose if the wafers are not annealed, because the signal is determined by the crystalline damage in the semiconductor induced by implantation. When the wafers are annealed at high temperature with most of the damages recovered, however, the PCR signal is no longer monotonic to the implantation dose. In this work, we obtained the PCR signals of the implanted and non-implanted regions from the same pieces of annealed sample. By subtracting the signals from the non-implanted regions, the influence of doped impurities on PCR signals is investigated. The different response at low implantation dose caused by B+ and P+ ions is analyzed.