Abstract
The latest ion-implantation results on SiC are presented. The authors have performed nitrogen and phosphorus (N/P) co-implantations to obtain very high n-type carrier concentrations, Si and C bombardments for compensating n-type SiC, and V-implantation for compensating p-type SiC. They have also performed N and Al implantations directly into V-doped semi-insulating 6H-SiC substrates. Vertical p-n junction diodes were made by selective area N, P, and N/P implantations into p-type epitaxial layers grown on 6H-SiC substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
