Abstract
The damage accumulation and annealing processes in ion bombarded InP and InGaAs have been studied. Epitaxial InGaAs layers on (100) oriented InP and InP crystals were implanted with 16O ions to produce a R p of 0.5 μm in each material for ion doses from 10 13 to 2 × 10 16 cm −2, implant temperature from 80 to 373 K, and beam flux from 0.01 to 1.8 μA cm −2. The retained damage following implantation was analyzed by the Rutherford backscattering/channeling technique. The results show that the response of each material to O ion bombardment is widely different for all implantation temperatures. Within the flux range studied, amorphous layers can be formed in InP at all temperatures up to 373 K for 16O fluences ≥ 5 × 10 14 cm −2. Strong dynamic defect annealing precludes amorphization of InGaAs at 290 K for O doses up to 5 × 10 15 cm −2 and beam flux up to 1.8 μA cm −2.
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