Abstract
The influence of dose rate and temperature on the implantation damage accumulation in InP has been investigated. InP crystals were implanted at 80–323 K with 600 keV Si+ ions at a beam flux of 0.005–1.0 μA cm−2, and to total fluences of between 5×1012 and 2×1014 Si cm−2. The residual damage following implantation was analysed by the Rutherford backscattering/channeling technique. The results show that at 80 K, the influence of the beam flux on the accumulated displacement damage is small. However, at T≥295 K the displaced atom density, Nd, exhibits a power law dependence on J:Nd=αJn, with the value of n dependent on both the total ion dose and implant temperature. At 295 K and Si doses of 1–4×1013 cm−2, the value of n varies from 0.23 to 0.15.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
