Abstract
The mechanisms of ion-enhanced gas-surface etching reactions have been investigated by the simultaneous exposure of 300-K silicon to coincident beams of Cl2 and modulated 1-keV Ar+ ions. The transient emission at low modulation frequencies suggests that a chlorinated film several atomic layers in depth is formed. SiClx emission products are thought to be formed on and within the film by sequential chlorination and are released in subsequent sputtering events. SiCl, which is believed to be emitted from surface of this film, exhibits a lower emission energy (≊0.03 eV) than SiCl4, which is emitted from within the film (≊4.0 eV).
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