Ion Energy Distributions at the Electron Cyclotron Resonance Position in Electron Cyclotron Resonance Plasma

Abstract

The extremely high selective phosphorus-doped polycrystalline silicon etching is achieved at the electron cyclotron resonance (ECR) position in a new developed ECR plasma etching system. To characterize these etching results, the ion energy distribution in an ECR plasma is measured. The mean ion energy and the width of ion energy distribution decrease as they near the ECR position. The ECR position in the ECR plasma has a high ion current density and low ion energy at the same time. These characteristics correspond to the etching results.