Abstract
Abstract Ion doping technology (IDT) for impurity doping is exactly one of the most important technology in the manufacturing of low temperature poly-silicon (LPS) TFT. Improvement of IDT are carried on according to more large-size glass and the requirement of LPS-TFT’s performance. IDT has become attractive very much, because it is required the application for forming source/drain, LDD region and adjusting Vth. We have developed ion doping system for large-size glass up to 730×920 mm 2 . It is focused to achieve using the sheet style (rectangular) beam and scanning glass, and currently we have developed the new system that has the function of mass separation of ion beam.
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