Abstract
In plasma immersion ion implantation, the wafer is negatively pulsed while immersed in a dc ambient plasma. During this high voltage pulse, the sheath expands, and plasma ions are accelerated to the wafer. The essential character of this plasma sheath expansion can be described by a simple mathematical model, first proposed by Lieberman. In this article, we build on Lieberman’s model, extending it to describe the ion current before and after the pulse. We find that a dip in ion current is predicted immediately after the pulse, due to the depletion of ions within the sheath. This simple model is tested using Faraday cup data, and is also compared to a particle-in-cell simulation.
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