Abstract
This paper describes an experiment and modeling in plasma immersion ion implantation using a high-voltage pulsed power system. This consists of a high-voltage pulse generator that uses a hard tube switch. The reason for using this type of circuit category in the Plasma Immersion Ion Implantation (PIII) facility rather than a previously used pulse-forming network (PFN) circuit configuration is stated. The experimental results of the application of this device to a glow discharge PIII are also discussed. In order to assess these results, a simple electrical model describes the plasma as a resistive load in parallel with a capacitance taking into account the pulse rise-time distortion caused by a long connecting coaxial cable. Plasma parameters for PIII processing, such as ion average implantation current and plasma sheath thickness, are calculated from the experimental settings.
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