Abstract
High energy proton channeling (12–120 GeV) and low energy helium ion channeling (1.5–4 MeV) have been used to study the effects of radiation damage induced in silicon by high energy (400 GeV) proton irradiation. It is shown that radiation fluence up to 10 17/cm 2 does not preclude deflection of high energy charged particle beams in elastically bent silicon crystals. Evidence of macroscopic segregation of residual defects in the strain field of a deformed crystal is demonstrated.
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