Ion channeling study of nickel metal growth on Ge(111) at room temperature

Abstract

The room temperature growth of Ni on Ge(111) was studied by MeV ion channeling and Auger electron spectrometry in an ultrahigh vacuum environment. For Ni coverages of up to 3 monolayers (ML), Ni reacts with the Ge substrate and effectively displaces 3 ML of Ge atoms from their original lattice positions forming a possible interfacial layer of NiGe. Further deposition of Ni results in a continuous, uniform metal overlayer. These room temperature results are very similar to those found for Ni and Co on Si(111). The similarities and differences between Ni on Ge and Ni on Si are also discussed.