Abstract
ABSTRACTWe have prepared GexSi1-x/Si structures by implanting germanium into silicon <100> surfaces and thermally annealing. Implant energies were 100 and 150 keV and the total ion doses were between 1 and 10 × 1015 ions/cm2. Ion channeling studies of these structures indicates that after annealing, the germanium atoms substitute into the silicon lattice and create a pseu-domorphic strained layer. In addition, channeling results suggest a residual band of dislocations at or beyond the ion range in the as-annealed samples.
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