Ion bombardment effects on undoped hydrogenated amorphous silicon films deposited by the electron cyclotron resonance plasma chemical vapor deposition method

Abstract

Ion bombardment effects on undoped hydrogenated amorphous silicon films deposited by the electron cyclotron resonance plasma chemical vapor deposition method without substrate heating using SiH4/Ar gas have been investigated by applying a dc bias voltage to the substrate. Ion bombardment to the growing films plays an important role in decreasing the polysilane phase and dangling bonds in the films, and in the realization of a high deposition rate. As a result, ion bombardment contributes to good photoconductivity at a high deposition rate, such as 170 nm/min, without substrate heating by decreasing the polysilane phase.