Abstract
We analyzed ultra-thin ZrO 2/SiO 2/Si gate dielectrics under post-deposition anneals in dry O 2 at temperatures from 500 to 700 °C. TOF-SIMS profiling of ZrO 2/SiO 2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO 2/SiO 2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate.
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