Abstract
The effect of ion bombardment on the enhancement of the etch rate of GaAs has been examined. The introduction of damage in GaAs due to ion bombardment has been analyzed by Rutherford backscattering techniques. The experimental results have shown clearly that a highly enhanced etch rate of 0.54 μm min in an HC1 (35%) solution heated to the boiling point is obtained from the ion bombarded amorphous GaAs layer. It has been shown that the enhanced etching can be used as a rapid precise tool for selective sectioning GaAs.
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