Abstract
The effect of ion bombardment on the enhancement of the etch rate of has been investigated. The damage creation in due to ion bombardment has also been examined by Rutherford backscattering techniques. It has been shown that a highly enhanced etch rate of 800 À/min in an solution is obtained from the ion bombardment‐induced amorphous layer, which can be easily produced by room temperature ion bombardment with light mass ions such as Mg ions. The experimental results obtained have shown that the ion bombardment‐enhanced etching can be used as a rapid precise tool for selective sectioning of .
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