Abstract
AbstractThe ion beam synthesis (IBS) of β-FeSi2 was examined by Rutherford backscattering spectroscopy (RBS) and x-ray diffractometry (XRD), and the structural characterization was carried out by Raman spectroscopy and scanning electron microscopy (SEM). We found that the IBS of β- FeSi2 is controlled by two different processes depending on the annealing temperature (Ta) and Fe surface concentration (Cs); (I) precipitation of β-FeSi2 on the surface in Cs˜30 at% and Ta⩾700° C and (II) phase transition from γ -FeSi2 to β-FeSi2 in Cs<∼20 at%and Ta⩾600°C. The precipitation process(1) created large sized (-10 μm) polycrystalline grains of β-FeSi2. The good crystalline β-FeSi2 obtained above 800°C showed a clear reflectance maximum at 0.88 eV due to the optical transition at the direct band-gap of 0.84 eV observed in the characteristic plot ((ahv)2 vs. hv) of the optical absorption.
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