Ion beam synthesis of ZrCxOy nanoparticles in cubic zirconia

Abstract

{110}-oriented yttria-stabilized zirconia single crystals have been implanted with low-energy C ions in an axial direction, at room temperature and at 550 °C. Room temperature ion implantation generated a damage layer that contains the expected dislocation loop clusters. Strikingly, the high temperature implantation produced zirconium oxycarbide nanoparticles (ZrCxOy) at a shallow depth in the yttria-stabilized cubic zirconia crystal, with a diameter in the range of 4–10 nm. Moreover, in the high concentration region of implanted C ions, between 100 and 150 nm below the surface, a number of large precipitates, up to 20 nm, were observed.