Abstract
Nickel and iron ions were selected to be implanted sequentially into (100) orientation silicon wafers to synthesize Ni-Fe-Si ternary silicide film. By using the metal-vapour vacuum-are ion-implantation system MEVVA 80-10, a ternary silicide layer of gamma-Fe0.6Ni0.4Si2 with CaF2 structure has been formed at implantation conditions of 7 x 10(16) Ni ions cm(-2) and 1.4 x 10(17) Fe ions cm(-2). With increase in annealing temperature, the grain size in the layer grows and the gamma phase is decomposed into nickel-rich and iron-rich phases. In the temperature range from 500 to 600 degrees C, a valuable structure of beta-Feo(0.6)Ni(0.4)Si(2)/CaF2-Fe0.35Ni0.65Si2/Si can be obtained. At proper annealing conditions, the gamma phase is decomposed into NiSi2 and FeSi2 phases. The morphology evolution of Ni-Fe-Si ternary silicide with increasing annealing temperature ranges from the layer thickness increasing to the film shrinking into isolated islands at 850 degrees C. (C) 1998 Elsevier Science S.A.
Published Version
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