Abstract
An unusual Ni distribution with two completely separated buried and surface silicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300°C, with a dose of 1.1 × 10 17/cm 2 and at a fixed energy of 90 keV. The Ni profile and its substrate temperature dependence, its dose dependence and the influence from the preceding Co implantation were studied by RBS, AES and TEM. A model based on the diffusion of the transition metal, defect annealing during the implantation, and the gettering power of the surface and the end-of-range defects is presented.
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