Abstract
ABSTRACTAn unusual Ni distribution with two completely separated buried and surface suicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300° C, with a dose of 1.1 × 1017/cm2 and at a fixed energy of 90 keV. RBS/channeling, AES and cross-sectional TEM have been used to study this phenomenon as a function of the substrate temperature and Co co4mplantation. A model is presented, based on the diffusion of the transition metal, the defect annealing during the implantation, and the gettering power of the surface and the end of range defects.
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