Abstract
Abstract4H silicon carbide (Si1–x C1–y )Gex +y solid solutions with an average Ge incorporation on lattice sites ranging from 0.7 to 2.5 percent were formed by ion beam synthesis. RBS and RBS/C investigations revealed a decreasing Ge lattice incorporation with increasing implantation dose above 10%. The carried out rapid thermal annealing at 1300 °C reduces the residual damage, increases the lattice site occupation and led to negligible change in the concentration profiles. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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