Grazing incident asymmetric X-ray diffraction of β-FeSi2 layers, produced by ion beam synthesis

Abstract

The crystal structure of β-FeSi2 phase, prepared by ion beam synthesis (IBS) method, followed by rapid thermal annealing (RTA) is investigated by grazing incident asymmetric X-ray diffraction (GIAXRD). The X-ray spectra, obtained at different grazing angles, indicated that the β-FeSi2 phase is formed in the whole implantation range. From the comparison of the reflections intensities ratios, it is found that in the metal-deficient regions, where the β-FeSi2 phase is present in the form of precipitates, the crystallites orientation is influenced by the one of the silicon substrates, while the orientation in the metal-rich region is different and depends on the annealing temperature.