Abstract
High Resolution X‐Ray Diffraction (HRXRD) studies have been performed to study the effects of Swift Heavy Ion (SHI) irradiation on In0.53Ga0.47As/InP lattice matched superlattice. Sample under the study have been irradiated using 130 MeV Ag ions to two different fluences (5 × 1012 ions/cm2 & 5 × 1013 ions/cm2). Pre and post irradiation annealing (RTA) studies have also been performed. A finite tensile lattice strain has been introduced due to the intermixing caused by ion irradiation and/or annealing processes. The superlattice period is found to increase due to ion irradiation and annealing processes. The superlattice structure used in this work was grown by Metal Organic Chemical Vapor‐phase epitaxial Deposition (MOCVD). Ion channeling measurements were earlier performed on the low dose sample. Channeling and HRXRD measurements show good crystalline/interface quality of pristine and processed samples. HRXRD also indicates the existence of the sharp boundaries across the superlattice interfaces. A decreasing modulation of the intensities of satellite peaks is caused by a gradual diffusion of individual layer interface. Such effects are more prominent for the irradiated and annealed sample.
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