Abstract
The epitaxial growth and the crystalline quality of CdTe films grown on different substrates were studied using Rutherford backscattering spectrometry (RBS) combined with channeling. The films which were 2.5 to 20 μm thick, were grown by metalorganic vapor phase epitaxy (MOVPE). Despite the big lattice mismatch (>10%) between the CdTe and the Si, GaAs and Al 2O 3 substrates used, a good epitaxial growth of the films was observed. The results show nearly defect free films with the following epitaxial relationship with the substrates: (1 1 1) CdTe ‖ (0 0 0 1) Al 2O 3, (1 0 0) CdTe ‖ (1 0 0) GaAs, (1 1 1) CdTe ‖ (1 0 0) Si. The values of the minimum yields, measured along the main axial directions, indicate that the best films were obtained with sapphire substrates. The surface quality of the layers improves with a subsequent recrystallization induced by laser annealing. These results, combined with previous electron microscopy and photoluminescence studies, give the possibility to optimize the growth conditions of large area CdTe layers used in the infrared (IR) technology.
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