Abstract
Thin amorphous silicon films on crystalline silicon substrates were prepared by magnetron reactive sputtering. The elastic resonant nuclear reaction 16O (α, α) 16O was used to profile the films for oxygen impurity content. Strong gettering effects were found for samples prepared at base vacuum pressures ≈10 −6 Torr. Analysis of oxygen content and profiles in the film indicated that the severe oxygen inclusion by the growing films could be eliminated by a combination of pumping, trapping and presputter gettering procedures. Films made under these precautionary conditions contained less than 0.1% oxygen.
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