Abstract
ABSTRACTElevated temperature ion bombardment of GaAs has been examined to investigate the nature of residual damage and the interplay between bombardment-induced defect production and dynamic annealing. The nature of disorder is found to depend strongly on ion energy, species, dose, dose rate and substrate temperature. A temperature regime is identified in which dynamic annealing leads both to the efficient formation of band gap traps for carrier removal and to the low temperature crystallization of pre-existing amorphous layers.
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