Abstract
ABSTRACTIon damage processes and amorphous phase formation are compared in Si, GaAs and Alx Ga1-x As materials in the critical regime where dynamic defect annealing is strongly competing with ion damage production. It is shown that the nature of residual damage is very strongly dependent on temperature, ion dose and dose rate in this critical regime for both Si and GaAs and that the amorphous phase can be “nucleated” by high levels of extended defects. In Alx Ga1-x As, the amorphous phase is increasingly more difficult to nucleate with increasing Al concentration at LN2 temperature but can be nucleated at sufficiently high implantation doses for all Al concentrations. No dose rate effect is observed for Alx Ga1-x As. This behaviour is discussed in terms of the availability of mobile defects and bonding configurational changes during irradiation.
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