Abstract
Titanium/aluminium interfaces produced by titanium thin film deposition on aluminium substrates have been reactively mixed using N 2 + ion beams of 2 and 3 keV at room temperature (RT). The ion beam mixing (IBM) has been analysed using X-ray photoelectron spectroscopy (XPS) and Monte Carlo TRIDYN simulations. Below ∼3 × 10 16 ions/cm 2, the IBM kinetic is characterized by a strong decrease of the Ti concentration along with a fast nitrogen incorporation up to ∼50%. Above that ion dose, the Ti/Al ratio can be varied in a broad range, whereas the nitrogen concentration slightly decreases with increasing the aluminium content of the film. The comparison of experimental results with those obtained from TRIDYN, that uses pure ballistic mechanisms, suggests that processes driven by residual defects are the rate-controlling mechanisms during the reactive IBM of Ti/Al interfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
