Ion beam milling-induced damage in AlGaAs/GaAs/AlGaAs single quantum well

Abstract

Ion beam milling-induced damage in a 500 Å AlGaAs/40Å GaAs/500Å AlGaAs single quantum well structure was investigated using low temperature cathodoluminescence spectroscopy. The ion beam energy (500–1500 eV) dependence of luminescence intensity indicated that minimum damage is introduced at a beam energy of 500 eV. Most (80–85%) of the original luminescence intensity was recovered on annealing at 400°C for 5 min.