Abstract
Microelectronic devices are complex multilayer structures: patterned regions of active semiconductor material are buried under a few microns of metallized layers, which carry electrical signals between the different components, and insulating layers that prevent shorting between contacts. When a finished device doesn't work, it is essential to determine why. One common way of imaging the distribution of active junctions is to irradiate completed devices with a focused beam of ionizing radiation. This creates charge carriers in the buried semiconductor material and, by measuring the number of carriers created as a function of position on the device surface, both electrical and physical properties, such as the alignment between the layers, can be obtained.
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