Abstract
The process of lithography involves the formation of patterns for selective area processing of devices at different stages of device fabrication. While conventional lithography is carried out using light for exposing “resists” the continuing miniaturization of integrated circuits has stimulated interest in new exposure techniques. Electrons, X-rays and ion beams can also deposit energy in a resist to expose it. Ion beams offer ultimate advantages in sensitivity and fineness of feature size because of their penetration properties in material. Lithographic patterns can be formed by use of scanned, finely focused ion beam. Whole lithographic patterns can be transferred by ion optical imaging or by channeled ion lithography. The progress in both types of ion beam lithography and in the development of high brightness ion sources and ion beam-compatible resists are summarized.
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