Abstract
The irradiation effects of 2 MeV He + and Ar + ions on the film structure of the C–Si system were investigated with RHEED and XPS. The formation of SiC phase and/or the growth of epitaxial SiC were possible by He + irradiation for the carbon films up to 0.7 nm in thickness, which was thinner than that by Ar + irradiation. The He + irradiation could not grow the turbostratic graphite which could be grown by Ar + irradiation. The mechanism of the formation and the epitaxial growth of SiC by ion irradiation was discussed from the view point of the energy transfer from the irradiated ions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
