Ion beam induced epitaxial crystallization of silicon implanted with heavy ions

Abstract

In this study we focus on the dynamics of heavy ions during the ion beam induced epitaxial crystallization (IBIEC) of the implanted amorphous layer as a function of annealing dose. Dopants used are with very low solid solubility and low diffusivity in Si. Behaviour of such elements was investigated when they are swept by the moving crystal/amorphous interface. Heavy ions, namely Te, Pb and Bi, were implanted at 100 keV into Si, in order to form amorphous layers. IBIEC of the implanted amorphous silicon was induced at 400 °C using a 3 MeV Si beam. Rutherford backscattering/channeling spectra of the resulting structures indicated that substitutional fractions of the all investigated ions (Te, Pb and Bi) after IBIEC were less than those of the conventional solid phase epitaxial growth.