Ion Beam Induced Charge Collection Measurements Performed on GaN Based LEDs

Abstract

GaN based LEDs were analyzed by the Ion Beam Induced Charge Collection technique. We describe the experimental setup and present the obtained results. The experimental maps provide details on the structural inhomogeneity of the p-n junction and on the quality of the LED structure. Moreover, the technique made it possible to highlight the induced beam damages. Nevertheless the current-voltage curves and electroluminescence spectra were not affected by the ionic bombardments.