Theory of ion beam induced charge collection in detectors based on the extended Shockley–Ramo theorem

Abstract

An analysis of the charge collection process induced by focused MeV ion beams in semiconductor devices is presented. It is based on the extended Shockley–Ramo theorem that provides a rigorous mathematical tool for the calculation of the induced charge and current under the assumption of a quasi-steady-state operation of the semiconductor device. A complete description of the theory and underlying assumption is given as well as a simple application of the method aimed to evaluate the main transport properties of fully depleted semiconductors from the analysis of frontal and lateral ion beam induced charge collection (IBICC) measurements.