Abstract
This work presents the peculiarities of cone ion beam formation with a focused thruster with anode layer (TAL) and its application to silicon carbide (SiC) ion beam figuring. Modeling results of Lorentz E × B force distribution in the discharge gap are presented. 3D particle tracing for keV Ar ions is carried out for the first time in the beam drift region of TAL with magnetic lens. Extracted ion beam full width at half maxima is about 2mm in the focal plane, where the SiC etching rate reaches 0.5 µm/min. The SiC sputter yields are measured as a function of the Ar ion impact energy and beam incidence angle. The maximum sputter yield of 2.8 atom/ion is observed at 45° of the beam-sample angle for the Si targets. Furthermore, the maximum sputter yield value of 1.7 atom/ion is measured at 30° of the beam-sample angle for the SiC targets. The novelty of present research is in the application of focused TAL keV Ar ion beam to the SiC ion beam figuring.
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