Abstract
Ion beam etching (IBE) of dense and porous PZT thin films at various incidence angles of the Ar+ ions flux is studied. The dependence of the etch rate as a function of the Ar+ ions incidence angle demonstrates maximum value at 40° for both dense and porous films. An angle of incidence of argon flux has an impact on microstructure of porous PZT film, in particular etching at the small incidence angle 5° provides a smoothing effect as a result of in plane preferential etching and a reprecipitation effect. Defects after ions flux exposure influence electrical properties appearing as a dead layer on the interface, this effect becomes more pronounced after the following heat treatment.
Published Version
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