Abstract
Stripe waveguides fabricated in the III–V semiconductors are required if the possibility of monolithic integration of optical devices and components is to be realized. A technique that is able to define micron and sub-micron features is essential to produce low loss waveguides. Ion beam etching has been demonstrated to be a possible method for the fabrication of guides with good wall edges. A comparison of etch rates, using argon and freon 12 has been made, as a function of the beam energy. Ion beam etching of GaAs grown on Al xGa 1−As layers has been examined for utilization in integrated optical applications. Results of etch rates, edge definition and wall profiles are presented. The influence of beam angle relative to the sample surface is reported and problems relating to the use of photoresist masks are also discussed. Rib type waveguides have been fabricated and light guiding demonstrated at 1.15 ωm.
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