Abstract
(001) prefer-oriented and in-plane textured CeO 2 films have been deposited on polycrystalline Ni–Cr metallic substrates by ion beam assisted deposition (IBAD). The effects of the incident angle and energy of the assisted bombarding Ar + ions on the texture were investigated. CeO 2 films deposited on Ni–Cr substrates without ion beam assisted bombardment have a mixture of (111), (220) and (311) orientations. Under ions bombarding at 30°–60° incident angle to the substrate normal, CeO 2 films show (001) preferential orientation. At 55°, the strongest (001) preferential orientation was obtained and, furthermore, the films exhibit strong in-plane texture. The optimal biaxial texture of CeO2 films was obtained by depositing CeO 2 on biaxially textured yttria-stabilized zirconia (YSZ) films at ambient substrate temperature. The optimal energy of the assisted ions to produce biaxial texture was found to be 250–500 eV. The formation of the biaxial texture was found to be a gradual process involving ion beam selective resputtering. More than 100 nm in thickness is needed to develop the texture.
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